AO8801
AO8801 Datasheet
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
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AO8801 |
AO8801 (pdf) |
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| AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor The AO8801 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 is Pbfree meets ROHS & Sony 259 specifications . AO8801L is a Green Product ordering option. AO8801 and AO8801L are electrically identical. VDS V = -20V ID = A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD Rating 3000V HBM TSSOP-8 Top View D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -30 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 73 96 Maximum Junction-to-Lead C Steady-State Max 90 125 75 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO8801 Symbol BVDSS Min Typ Max Units -20 T AO8801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -8V -4.5V -3.0V -2.5V -2.0V 10 VDS=-5V -ID A |
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