FDW2506P

FDW2506P Datasheet

FDW2506P

Part	Datasheet
FDW2506P	FDW2506P (pdf)

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FDW2506P October 2000 FDW2506P Dual P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V, RDS ON = VGS = V. RDS ON = VGS = • Extended VGSS range ±12V for battery applications • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Ratings ±12 -55 to +150 125 208 Units °C/W Package Marking and Ordering Information Device Marking Device Reel Size 2506P FDW2506P 13’’ Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW2506P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA ID = µA, Referenced to 25°C mV/°C

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FDW2506P

October 2000

FDW2506P

Dual P-Channel 2.5V Specified MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, V, RDS ON = VGS = V. RDS ON = VGS =
• Extended VGSS range ±12V for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS ON
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b

Ratings
±12 -55 to +150
125 208

Units
°C/W
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2506P

FDW2506P
13’’

Tape width 12mm

Quantity 2500 units

Fairchild Semiconductor Corporation

FDW2506P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA ID = µA, Referenced to 25°C

VDS = V, VGS = V, VGS = 12 V,

VGS = 0 V VDS = 0 V VDS = 0 V

V mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

VDS = VGS, ID = µA ID = µA, Referenced to 25°C
mV/°C

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Datasheet ID: FDW2506P 514408