FDW2502P
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FDW2502P (pdf) |
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FDW2502P July 2008 FDW2502P Dual P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V • Load switch • Motor drive • DC/DC conversion • Power management • A, V. RDS ON = 35 VGS = V RDS ON = 57 VGS = V. • Extended VGSS range ±12V for battery applications. • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package. G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Ratings ±12 -55 to +150 125 208 Units °C/W Package Marking and Ordering Information Device Marking Device Reel Size 2502P FDW2502P 13’’ Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDW2502P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = µA ID = µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = ,TJ=125°C VGS = V, ID = A VGS = V, VDS = V VDS = V, ID = A Dynamic Characteristics Ciss |
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