FDW2502P

FDW2502P Datasheet


FDW2502P

Part Datasheet
FDW2502P FDW2502P FDW2502P (pdf)
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FDW2502P

July 2008

FDW2502P

Dual P-Channel 2.5V Specified MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, V. RDS ON = 35 VGS = V RDS ON = 57 VGS = V.
• Extended VGSS range ±12V for battery applications.
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package.

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b

Ratings
±12 -55 to +150
125 208

Units
°C/W
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2502P

FDW2502P
13’’

Tape width 12mm

Quantity 2500 units

Fairchild Semiconductor Corporation

FDW2502P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±12 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

VDS = VGS, ID = µA

ID = µA, Referenced to 25°C

VGS = V, ID = A VGS = V, ID = ,TJ=125°C VGS = V, ID = A

VGS = V, VDS = V

VDS = V,

ID = A

Dynamic Characteristics

Ciss
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Datasheet ID: FDW2502P 514404