FDS8958

FDS8958 Datasheet

FDS8958

Part	Datasheet
FDS8958	FDS8958 (pdf)

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FDS8958 October 2004 FDS8958 Dual N & P-Channel MOSFET These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Q1 N-Channel 7.0A, 30V RDS on = VGS = 10V RDS on = VGS = 4.5V • Q2 P-Channel -5A, -30V RDS on = VGS = -10V RDS on = VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2 DD1 SO-8 Pin 1 SO-8 S2 G G1 S S1 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS8958 FDS8958 13” ±20 ±20 -55 to +150 78 40 Units °C/W °C/W Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS8958 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Q1 30 Q2 -30 mV/°C 100 nA -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage

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FDS8958

October 2004

FDS8958

Dual N & P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• Q1 N-Channel 7.0A, 30V RDS on = VGS = 10V RDS on = VGS = 4.5V
• Q2 P-Channel -5A, -30V RDS on = VGS = -10V RDS on = VGS = -4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package

DD2 DD1

SO-8

Pin 1 SO-8

S2 G G1 S S1 S

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS

Drain-Source Voltage Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Note 1a

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS8958

FDS8958
13”
±20
±20
-55 to +150
78 40

Units
°C/W °C/W

Tape width 12mm

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDS8958

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Type Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

Q1 30

Q2 -30
mV/°C
100 nA
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

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Datasheet ID: FDS8958 514385