FDW2501N

FDW2501N Datasheet

FDW2501N

Part	Datasheet
FDW2501N	FDW2501N (pdf)

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FDW2501N July 2008 FDW2501N Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • 6 A, 20 V. RDS ON = VGS = 4.5V RDS ON = VGS = 2.5V • Extended VGSS range ±12V for battery applications. • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package G2 S2 D2 TSSOP-8 G1 S1 D1 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2501N FDW2501N 13’’ 1 2 3 4 Ratings 20 ±12 6 30 -55 to +150 125 208 Tape width 12mm 8 7 6 5 Units V A W °C °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDW2501N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on

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FDW2501N

July 2008

FDW2501N

Dual N-Channel 2.5V Specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• 6 A, 20 V.

RDS ON = VGS = 4.5V RDS ON = VGS = 2.5V
• Extended VGSS range ±12V for battery applications.
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

G2 S2 D2

TSSOP-8

G1 S1 D1

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Note 1a

Pulsed

Power Dissipation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2501N

FDW2501N
13’’
1 2 3 4

Ratings
20 ±12
6 30 -55 to +150
125 208

Tape width 12mm
8 7 6 5

Units

V A W °C
°C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDW2501N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

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Datasheet ID: FDW2501N 514401