FDT55AN06LA0

FDT55AN06LA0 Datasheet

FDT55AN06LA0 N-Channel MOSFET

Part	Datasheet
FDT55AN06LA0	FDT55AN06LA0 (pdf)

PDF Datasheet Preview
FDT55AN06LA0 N-Channel MOSFET February 2008 FDT55AN06LA0 tm N-Channel 60V, 11A, 55m: • RDS on = 44m VGS = 5V, ID = 11A • Qg tot = 7.6nC VGS = 5V. • Low Miller Charge • Low QRR Body Diode • UIS Capability • RoHS compliant • Motor / Body load control • Power train management • DC-AC converters • Distributed power architectures and VRMs SOT-22 3 MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS IDM EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC, VGS = 10V -Continuous TC = 25oC, VGS = 5V -Continuous TC = 10oC, VGS = 5V - Pulsed Note 1 Single Pulsed Avalanche Energy Power Dissipation TC = 25oC - Derate above 25oC Note 2 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient *When mounted on the minimum pad size recommended PCB Mount Ratings 60 ±20 11 7 36 34 -55 to +150 Ratings 14 100 Units V A mJ W/oC Units oC/W 2008 Fairchild Semiconductor Corporation FDT55AN06LA0 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDT55AN06LA0 Device FDT55AN06LA0 Package SOT-223 Reel Size 330mm Tape Width 12mm Quantity 4000 Electrical Characteristics Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250PA, VGS = 0V, TJ = 25oC VDS = 50V, VGS = 0V VDS = 50V, TC = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain to Source On Resistance VGS = VDS, ID = 250PA VGS = 10V, ID = 11A VDS = 5V, ID = 11A Dynamic Characteristics Ciss Coss Crss VDS = 25V, VGS = 0V f = 1MHz Switching Characteristics tON td on tr td off tf tOFF Qg tot Qgs Qgd Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 30V, ID = 11A VGS = 5V, RGS = 18: VDS = 30V, ID = 11A VGS = 0V to 5V Drain-Source Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11A VGS = 0V, ISD = 11A dIF/dt = 100A/Ps

PDF Datasheet Preview

FDT55AN06LA0 N-Channel MOSFET

February 2008

FDT55AN06LA0 tm

N-Channel
60V, 11A, 55m:
• RDS on = 44m VGS = 5V, ID = 11A
• Qg tot = 7.6nC VGS = 5V.
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability
• RoHS compliant
• Motor / Body load control
• Power train management
• DC-AC converters
• Distributed power architectures and VRMs

SOT-22 3

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol VDSS VGSS

IDM EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC, VGS = 10V -Continuous TC = 25oC, VGS = 5V -Continuous TC = 10oC, VGS = 5V
- Pulsed

Note 1

Single Pulsed Avalanche Energy

Power Dissipation

TC = 25oC - Derate above 25oC

Note 2

TJ, TSTG TL

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter

RTJC

Thermal Resistance, Junction to Case

RTJA

Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended PCB Mount

Ratings 60 ±20 11 7 36 34
-55 to +150

Ratings 14 100

Units V

A mJ W/oC

Units oC/W
2008 Fairchild Semiconductor Corporation

FDT55AN06LA0 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking FDT55AN06LA0

Device FDT55AN06LA0

Package SOT-223

Reel Size 330mm

Tape Width 12mm

Quantity 4000

Electrical Characteristics

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250PA, VGS = 0V, TJ = 25oC

VDS = 50V, VGS = 0V VDS = 50V, TC = 150oC

VGS = ±20V, VDS = 0V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain to Source On Resistance

VGS = VDS, ID = 250PA

VGS = 10V, ID = 11A VDS = 5V, ID = 11A

Dynamic Characteristics

Ciss Coss Crss

VDS = 25V, VGS = 0V f = 1MHz

Switching Characteristics
tON td on tr td off tf tOFF Qg tot Qgs Qgd

Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge

VDD = 30V, ID = 11A VGS = 5V, RGS = 18:

VDS = 30V, ID = 11A VGS = 0V to 5V

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 11A

VGS = 0V, ISD = 11A dIF/dt = 100A/Ps

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDT55AN06LA0 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDT55AN06LA0 514393