BLF7G22L-160,118

BLF7G22L-160,118 Datasheet


BLF7G22L-160 BLF7G22LS-160

Part Datasheet
BLF7G22L-160,118 BLF7G22L-160,118 BLF7G22L-160,118 (pdf)
Related Parts Information
BLF7G22L-160,112 BLF7G22L-160,112 BLF7G22L-160,112
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BLF7G22L-160 BLF7G22LS-160

Power LDMOS transistor

Product profile
160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table Typical performance

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Mode of operation

VDS PL AV

ACPR
mA V W
dB % dBc
2-carrier W-CDMA
2110 to 2170
1300 28 43
[1] Test signal 3GPP test model 1 64 DPCH PAR = dB at % probability on CCDF carrier spacing 5 MHz.

Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range

BLF7G22L-160 BLF7G22LS-160

Power LDMOS transistor

Pinning information

Table Pinning

BLF7G22L-160 SOT502A
drain
gate
source

BLF7G22LS-160 SOT502B
drain
gate
source
[1] Connected to flange.
Ordering information

Simplified outline Graphic symbol
sym112
3 [1]
sym112
Table Ordering information

Type number

Package

Name Description

BLF7G22L-160 -
flanged LDMOST ceramic package 2 mounting holes 2 leads

BLF7G22LS-160 -
earless flanged LDMOST ceramic package 2 leads

Version SOT502A

SOT502B

Limiting values

Table Limiting values In accordance with the Absolute Maximum Rating System IEC

Symbol Parameter

Conditions
drain-source voltage
gate-source voltage
drain current

Tstg
storage temperature
junction temperature

Thermal characteristics

Min Max Unit
+13 V
+150 C
200 C

Table Symbol Rth j-c

Thermal characteristics Parameter thermal resistance from junction to case

Conditions Tcase = 80 C PL = 55 W

Typ Unit K/W

BLF7G22L-160_7G22LS-160#3

All information provided in this document is subject to legal disclaimers.

Ampleon The Netherlands B.V. All rights reserved.
2 of 18

BLF7G22L-160 BLF7G22LS-160

Power LDMOS transistor

Characteristics

Table Characteristics Tj = 25 C unless otherwise specified.

Symbol Parameter

V BR DSS drain-source breakdown voltage

VGS th IDSS IDSX
gate-source threshold voltage drain leakage current drain cut-off current
Ordering information 2

Limiting values. 2

Thermal characteristics 2

Characteristics 3

Test information 3

Ruggedness in class-AB operation 3
2-Carrier W-CDMA 5 MHz 4
2-Carrier W-CDMA 10 MHz 5
1-Carrier W-CDMA 6

IS-95 8

CW-pulsed 10

Test circuit. 11

Impedance information 12

Package outline 13

Abbreviations 15

Legal information. 16

Data sheet status 16

Definitions 16

Disclaimers 16

Trademarks. 17

Contact information. 17

Contents 18

Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’.

Ampleon The Netherlands B.V.

All rights reserved.

For more information, please visit For sales office addresses, please visit:

Date of release 1 September 2015

Document identifier BLF7G22L-160_7G22LS-160#3
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Datasheet ID: BLF7G22L-160,118 517632