FQPF5N50CFTU

FQPF5N50CFTU Datasheet

FQPF5N50CF 500V N-Channel MOSFET

Part	Datasheet
FQPF5N50CFTU	FQPF5N50CFTU (pdf)

PDF Datasheet Preview
FQPF5N50CF 500V N-Channel MOSFET FQPF5N50CF 500V N-Channel MOSFET • 5A, 500V, RDS on = = 10 V • Low gate charge typical 18nC • Low Crss typical 15pF • Fast switching • 100% avalanche tested • Improved dv/dt capability FRFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F FQPF Series Absolute Maximum Ratings Parameter VDSS Drain-Source Voltage IDM VGSS EAS IAR EAR dv/dt Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient ● ● FQPF5N50CF 500 5 20 ± 30 300 5 38 -55 to +150 300 FQPF5N50CF Units V A V mJ A mJ V/ns W/°C °C °C Units °C/W °C/W °C/W 2005 Fairchild Semiconductor Corporation Package Marking and Ordering Information Device Marking FQPF5N50CF Device FQPF5N50CF Package TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coef- ID = 250 µA, Referenced to 25°C ficient IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.5A VDS = 40 V, ID = 2.5A Note 4 Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = MHz

PDF Datasheet Preview

FQPF5N50CF 500V N-Channel MOSFET

FQPF5N50CF
500V N-Channel MOSFET
• 5A, 500V, RDS on = = 10 V
• Low gate charge typical 18nC
• Low Crss typical 15pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

FRFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-220F

FQPF Series

Absolute Maximum Ratings

Parameter

VDSS

Drain-Source Voltage

IDM VGSS EAS IAR EAR dv/dt

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
● ●

FQPF5N50CF
500 5 20
± 30 300
5 38 -55 to +150 300

FQPF5N50CF

Units

V A V mJ A mJ V/ns W/°C °C °C

Units
°C/W °C/W °C/W
2005 Fairchild Semiconductor Corporation
Package Marking and Ordering Information

Device Marking

FQPF5N50CF

Device

FQPF5N50CF

Package

TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coef- ID = 250 µA, Referenced to 25°C
ficient

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V

IGSSR

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 2.5A

VDS = 40 V, ID = 2.5A

Note 4

Dynamic Characteristics

Ciss Coss

Input Capacitance Output Capacitance

VDS = 25 V, VGS = 0 V,
f = MHz

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQPF5N50CFTU Datasheet file may be downloaded here without warranties.

Datasheet ID: FQPF5N50CFTU 515433