FDS9412A

FDS9412A Datasheet

FDS9412A N-Channel MOSFET

Part	Datasheet
FDS9412A	FDS9412A (pdf)

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FDS9412A N-Channel MOSFET February 2006 FDS9412A N-Channel MOSFET 30V, 8A, This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS on and fast switching speed. - Max rDS on = at VGS = 10V, ID = 8A - Max rDS on = at VGS = 4.5V, ID = 6.6A - Low gate charge - RoHS Compliant Application - DC/DC converters SO-8 G SS S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous TA = 25°C, VGS = 10V, = 50°C/W -Continuous TA = 25°C, VGS = 4.5V, = 50°C/W -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power dissipation Operating and Storage Temperature Note 3 Thermal Characteristics Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient Note 1 Note 1a Package Marking and Ordering Information Device Marking FDS9412A Device FDS9412A Package SO-8 Reel Size 330mm Ratings 30 ±20 8 30 54 -55 to 150 25 50 Tape Width 12mm Units V A mJ W °C °C/W °C/W Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDS9412A N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V TJ = 150°C mV/°C 1 µA 250 ±100 µA On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance

PDF Datasheet Preview

FDS9412A N-Channel MOSFET

February 2006

FDS9412A N-Channel MOSFET
30V, 8A,

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS on and fast switching speed.
- Max rDS on = at VGS = 10V, ID = 8A - Max rDS on = at VGS = 4.5V, ID = 6.6A - Low gate charge - RoHS Compliant

Application
- DC/DC converters

SO-8

G SS S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous TA = 25°C, VGS = 10V, = 50°C/W -Continuous TA = 25°C, VGS = 4.5V, = 50°C/W -Pulsed

EAS PD TJ, TSTG

Single Pulse Avalanche Energy Power dissipation Operating and Storage Temperature

Note 3

Thermal Characteristics

Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient

Note 1 Note 1a
Package Marking and Ordering Information

Device Marking FDS9412A

Device FDS9412A

Package SO-8

Reel Size 330mm

Ratings 30 ±20 8 30 54
-55 to 150
25 50

Tape Width 12mm

Units V

A mJ W °C
°C/W °C/W

Quantity 2500 units
2006 Fairchild Semiconductor Corporation

FDS9412A N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

ID = 250µA, referenced to 25°C

VDS = 24V, VGS = 0V

VGS = ±20V

TJ = 150°C
mV/°C
1 µA
250 ±100 µA

On Characteristics Note 2

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On Resistance

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Datasheet ID: FDS9412A 514388