FDS7064SN3
FDS7064SN3 Datasheet
FDS7064SN3
| Part | Datasheet |
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FDS7064SN3 |
FDS7064SN3 (pdf) |
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| FDS7064SN3 February 2004 FDS7064SN3 30V N-Channel SyncFET • Synchronous Rectifier • Features • 16 A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • No inductance between MOSFET and Schottky • 40% reduction in Body Diode Forward Voltage • Optimized to reduce losses in Synchronous Buck Regulators • FLMP SO-8 package for enhanced thermal performance. DNCDNCDNCDNC FLMP SO-8 Pin 1SO- SSSS SSGG Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7064SN3 FDS7064SN3 13’’ Fairchild Semiconductor Corporation Ratings 30 ±16 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7064SN3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V mV/°C 500 µA ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, ID = 16 A VGS = V, ID = 14 A VGS = 10 V, ID = 16 A, TJ = 125°C |
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