FDB8876
FDB8876 Datasheet
FDB8876 N-Channel MOSFET
| Part | Datasheet |
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FDB8876 |
FDB8876 (pdf) |
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| FDB8876 N-Channel MOSFET November 2005 FDB8876 N-Channel MOSFET 30V, 71A, General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. - rDS ON = VGS = 10V, ID = 40A - rDS ON = VGS = 4.5V, ID = 40A - High performance trench technology for extremely low rDS ON - Low gate charge - High power and current handling capability - RoHS Compliant GATE SOURCE TO-263AB FDB SERIES DRAIN FLANGE MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 4.5V Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Note 1 Power dissipation Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263,1in2copper pad area Package Marking and Ordering Information Device Marking FDB8876 Device FDB8876 Package TO-263AB Reel Size 330mm Ratings 30 ±20 71 65 Figure 4 180 70 -55 to 175 Tape Width 24mm Units V A mJ W oC oC/W oC/W Quantity 800 units 2005 Fairchild Semiconductor Corporation FDB8876 N-Channel MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TA = 150oC - VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 40A, VGS = 10V rDS ON Drain to Source On Resistance ID = 40A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS=0.5V, f = 1MHz |
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