FDS6982S

FDS6982S Datasheet

FDS6982S

Part	Datasheet
FDS6982S	FDS6982S (pdf)

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FDS6982S September 2000 FDS6982S Dual Notebook Power Supply N-Channel SyncFet The FDS6982S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the lowside switch Q2 is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode = 8.6A, 30V RDS on = VGS = 10V = RDS on = VGS = 4.5V • Q1 Optimized for low switching losses Low Gate Charge nC typical = 6.3A, 30V RDS on = VGS = 10V = RDS on = VGS = 4.5V D1 D2 SO-8 G1 S1 G2 S2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6982S FDS6982S 13” ±20 ±20 -55 to +150 Units °C/W °C/W Tape width 12mm Quantity 2500 units Fairchild Semiconductor Corporation FDS6982S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward IGSSR VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on On-State Drain Current VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA

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FDS6982S

September 2000

FDS6982S

Dual Notebook Power Supply N-Channel SyncFet

The FDS6982S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the lowside switch Q2 is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
• Q2 Optimized to minimize conduction losses Includes SyncFET Schottky body diode
= 8.6A, 30V RDS on = VGS = 10V = RDS on = VGS = 4.5V
• Q1 Optimized for low switching losses Low Gate Charge nC typical
= 6.3A, 30V RDS on = VGS = 10V = RDS on = VGS = 4.5V

D1 D2

SO-8

G1 S1 G2 S2

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID PD

TJ, TSTG

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous - Pulsed

Power Dissipation for Dual Operation

Note 1a

Power Dissipation for Single Operation

Note 1a Note 1b

Note 1c

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6982S

FDS6982S
13”
±20
±20
-55 to +150

Units
°C/W
°C/W

Tape width 12mm

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS6982S

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage, Forward

IGSSR

VGS = 0 V, ID = 1 mA VGS = 0 V, ID = 250 uA ID = 1 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V

VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

On-State Drain Current

VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA

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Datasheet ID: FDS6982S 514352