FDS6688S

FDS6688S Datasheet

FDS6688S 30V N-Channel SyncFET

Part	Datasheet
FDS6688S	FDS6688S (pdf)

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FDS6688S 30V N-Channel SyncFET November 2007 FDS6688S 30V N-Channel SyncFET The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter • Motor drives • 16 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Includes SyncFET Schottky body diode • High performance trench technology for extremely low RDS ON and fast switching • High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6688S FDS6688S 13’’ 5 6 7 8 Ratings 30 ±20 16 50 1 to +125 50 25 Tape width 12mm 4 3 2 1 Units °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS6688S 30V N-Channel SyncFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage VGS = 0 V, ID = 1 mA Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C mV/°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics VGS th RDS on Gate Threshold Voltage

PDF Datasheet Preview

FDS6688S 30V N-Channel SyncFET

November 2007

FDS6688S
30V N-Channel SyncFET

The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
• DC/DC converter
• Motor drives
• 16 A, 30 V.

RDS ON = VGS = 10 V RDS ON = VGS = V
• Includes SyncFET Schottky body diode
• High performance trench technology for extremely low RDS ON and fast switching
• High power and current handling capability

SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6688S

FDS6688S
13’’
5 6 7 8

Ratings
30 ±20 16 50
1 to +125
50 25

Tape width 12mm
4 3 2 1

Units
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS6688S 30V N-Channel SyncFET

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage VGS = 0 V, ID = 1 mA

Breakdown Voltage Temperature Coefficient

ID = 10 mA, Referenced to 25°C
mV/°C

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V

IGSS

Leakage

VGS = ±20 V, VDS = 0 V
±100 nA

On Characteristics

VGS th

RDS on

Gate Threshold Voltage

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Datasheet ID: FDS6688S 514341