AO4438_101

AO4438_101 Datasheet


AO4438

Part Datasheet
AO4438_101 AO4438_101 AO4438_101 (pdf)
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AO4438
60V N-Channel MOSFET

The AO4438 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications.

Product Summary

VDS V = 60V ID = 8.2A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V
100% UIS Tested 100% Rg Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

Power Dissipation

TA=25°C TA=70°C

Junction and Storage Temperature Range TJ, TSTG

Maximum 60 ±20 40 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t 10s Steady-State
24 54
40 75

Maximum Junction-to-Lead C

Steady-State

Units V

W °C

Units °C/W °C/W °C/W

AO4438

N Channel Electrical Characteristics TJ=25°C unless otherwise noted

Symbol Parameter

Conditions

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS
More datasheets: CY7C1413JV18-300BZXC | CY7C1426JV18-300BZXC | CY7C1413JV18-250BZI | CY7C1426JV18-300BZC | CY7C1413JV18-200BZXI | CY7C1415JV18-250BZXI | CY7C1413JV18-250BZXC | DFR0259 | 833802T00000 | SW6PFAS-50


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Datasheet ID: AO4438_101 516167