AO4438
Part | Datasheet |
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AO4438_101 | AO4438_101 (pdf) |
PDF Datasheet Preview |
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AO4438 60V N-Channel MOSFET The AO4438 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS V = 60V ID = 8.2A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 40 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 24 54 40 75 Maximum Junction-to-Lead C Steady-State Units V W °C Units °C/W °C/W °C/W AO4438 N Channel Electrical Characteristics TJ=25°C unless otherwise noted Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS |
More datasheets: CY7C1413JV18-300BZXC | CY7C1426JV18-300BZXC | CY7C1413JV18-250BZI | CY7C1426JV18-300BZC | CY7C1413JV18-200BZXI | CY7C1415JV18-250BZXI | CY7C1413JV18-250BZXC | DFR0259 | 833802T00000 | SW6PFAS-50 |
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