FDS6675A

FDS6675A Datasheet

FDS6675A

Part	Datasheet
FDS6675A	FDS6675A (pdf)

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FDS6675A February 2003 FDS6675A 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V 25V . • Power management • Load switch • Battery protection • A, V RDS ON = 13 VGS = V RDS ON = 19 VGS = V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6675A FDS6675A 13’’ Ratings ±25 1 to +175 50 125 25 Tape width 12mm Units °C/W °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS6675A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS IGSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Leakage VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±25 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static ID on Drain Current Forward Transconductance

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FDS6675A

February 2003

FDS6675A
30V P-Channel MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V 25V .
• Power management
• Load switch
• Battery protection
• A, V

RDS ON = 13 VGS = V RDS ON = 19 VGS = V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

Pin 1 SO-8 SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1c Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6675A

FDS6675A
13’’

Ratings
±25
1 to +175
50 125 25

Tape width 12mm

Units
°C/W °C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS6675A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

IGSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current Leakage

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±25 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage

Temperature Coefficient

RDS on

Static

ID on

Drain Current

Forward Transconductance

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Datasheet ID: FDS6675A 514334