FDS6572A

FDS6572A Datasheet

FDS6572A

Part	Datasheet
FDS6572A	FDS6572A (pdf)

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FDS6572A September 2001 FDS6572A 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • 16 A, 20 V. RDS ON = 6 VGS = V RDS ON = 8 VGS = V • Low gate charge 57 nC • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6572A FDS6572A 13’’ 5 6 7 8 Ratings 20 ±12 16 80 to +175 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6572A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on

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FDS6572A

September 2001

FDS6572A
20V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• 16 A, 20 V.

RDS ON = 6 VGS = V RDS ON = 8 VGS = V
• Low gate charge 57 nC
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6572A

FDS6572A
13’’
5 6 7 8

Ratings
20 ±12 16 80 to +175
50 25

Tape width 12mm
4 3 2 1

Units
°C/W °C/W

Quantity 2500 units
2001 Fairchild Semiconductor Corporation

FDS6572A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

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Datasheet ID: FDS6572A 514329