FDS6162N3

FDS6162N3 Datasheet

FDS6162N3

Part	Datasheet
FDS6162N3	FDS6162N3 (pdf)

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FDS6162N3 May 2003 FDS6162N3 20V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • 21 A, 20 V RDS ON = VGS = V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS6162N3 FDS6162N3 13’’ Fairchild Semiconductor Corporation Ratings 20 ± 12 21 60 to +150 Tape width 12mm Units W °C °C/W Quantity 2500 units FDS6162N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = V , VGS = 0 V VDS = 0 V VDS = 0 V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on

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FDS6162N3

May 2003

FDS6162N3
20V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• 21 A, 20 V

RDS ON = VGS = V RDS ON = VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6162N3

FDS6162N3
13’’

Fairchild Semiconductor Corporation

Ratings
20 ± 12 21 60 to +150

Tape width 12mm

Units

W °C
°C/W

Quantity 2500 units

FDS6162N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 12 V, VGS = V ,

VGS = 0 V VDS = 0 V VDS = 0 V
mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

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Datasheet ID: FDS6162N3 514326