FJNS3207RTA
FJNS3207RTA Datasheet
FJNS3207R
| Part | Datasheet |
|---|---|
FJNS3207RTA |
FJNS3207RTA (pdf) |
| Related Parts | Information |
|---|---|
FJNS3207RBU |
FJNS3207RBU |
| PDF Datasheet Preview |
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| FJNS3207R FJNS3207R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJNS4207R TO-92S 1.Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter Value Units VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -55 ~ 150 Equivalent Circuit Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz fT VI off VI on R1/R2 Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA Min. 50 68 Typ. 250 22 Max. Units V µA V pF MHz V 2002 Fairchild Semiconductor Corporation FJNS3207R Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = 5V R1 = 22K R2 = 47K IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V R = 22K R = 47K 2 VI off [V], INPUT OFF VOLTAGE |
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