FJNS3207RTA

FJNS3207RTA Datasheet


FJNS3207R

Part Datasheet
FJNS3207RTA FJNS3207RTA FJNS3207RTA (pdf)
Related Parts Information
FJNS3207RBU FJNS3207RBU FJNS3207RBU
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FJNS3207R

FJNS3207R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJNS4207R

TO-92S
1.Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

Value

Units

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
-55 ~ 150

Equivalent Circuit

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance

IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz
fT VI off VI on R1/R2

Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Ratio

VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA

Min. 50 68

Typ.
250 22

Max.

Units V µA V pF

MHz V
2002 Fairchild Semiconductor Corporation

FJNS3207R

Typical Characteristics
hFE, DC CURRENT GAIN
1000 100

VCE = 5V R1 = 22K R2 = 47K

IC[mA], COLLECTOR CURRENT

Figure DC current Gain

VCE = 5V R = 22K

R = 47K 2

VI off [V], INPUT OFF VOLTAGE
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Datasheet ID: FJNS3207RTA 514756