FDS4885C
FDS4885C Datasheet
FDS4885C Dual N-Channel & P-Channel PowerTrench MOSFET
| Part | Datasheet |
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FDS4885C |
FDS4885C (pdf) |
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| FDS4885C Dual N-Channel & P-Channel PowerTrench MOSFET These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Synchronous rectifier • Back-light inverter stage • Q1 N-Channel 7.5A, 40V RDS on = VGS = 10V RDS on = VGS = 7V • Q2 P-Channel -6A, -40V RDS on = VGS = -10V RDS on = VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package • SO-8 This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. |
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