FDS4080N3

FDS4080N3 Datasheet

FDS4080N3

Part	Datasheet
FDS4080N3	FDS4080N3 (pdf)

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FDS4080N3 February 2004 FDS4080N3 40V N-Channel FLMP MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • 13 A, 40 V RDS ON = VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching Qg = 30 nC • FLMP SO-8 package Enhanced thermal performance in industry-standard package size NDCDNCDNCDNC FBLoMttPomSOle-8ss SO-8 Pin 1SO-8 SS SSGG Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDS4080N3 FDS4080N3 13’’ Ratings 40 ± 20 13 60 to +150 Tape width 12mm Fairchild Semiconductor Corporation 4 3 2 1 Units V A W °C °C/W °C/W Quantity 2500 units FDS4080N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=13A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V ,VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Forward Transconductance

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FDS4080N3

February 2004

FDS4080N3
40V N-Channel FLMP MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• 13 A, 40 V

RDS ON = VGS = 10 V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching Qg = 30 nC
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

NDCDNCDNCDNC

FBLoMttPomSOle-8ss SO-8 Pin 1SO-8

SS SSGG

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4080N3

FDS4080N3
13’’

Ratings
40 ± 20 13 60 to +150

Tape width 12mm

Fairchild Semiconductor Corporation
4 3 2 1

Units

V A W °C
°C/W °C/W

Quantity 2500 units

FDS4080N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 10V, ID=13A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 32 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V ,VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient Static

Forward Transconductance

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Datasheet ID: FDS4080N3 514307