FDS4070N7
FDS4070N7 Datasheet
FDS4070N7
| Part | Datasheet |
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FDS4070N7 |
FDS4070N7 (pdf) |
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| FDS4070N7 January 2004 FDS4070N7 40V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 40 V. RDS ON = 7 VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Maximum Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4070N7 FDS4070N7 13’’ Ratings 40 ± 20 60 to +150 Tape width 12mm Units W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS4070N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=15.3A Drain-Source Avalanche Current 310 mJ Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V V mV/°C IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 |
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