AO5401EL
AO5401EL Datasheet
AO5401E P-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO5401EL |
AO5401EL (pdf) |
| Related Parts | Information |
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AO5401E |
AO5401E |
| PDF Datasheet Preview |
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| AO5401E P-Channel Enhancement Mode Field Effect Transistor The AO5401E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS compliant -AO5401EL is Halogen Free VDS V = -20V ID = A VGS = -4.5V RDS ON < VGS = -4.5V RDS ON < VGS = -2.5V RDS ON < VGS = -1.8V ESD PROTECTED! SC89-3L Top View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter 10 Sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Typ 275 360 300 Max 330 450 350 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO5401E Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate-Body leakage current |
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