FDS3570
FDS3570 Datasheet
FDS3570
| Part | Datasheet |
|---|---|
FDS3570 |
FDS3570 (pdf) |
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| FDS3570 May 1999 PRELIMINARY FDS3570 80V N-Channel PowerTrenchTM MOSFET This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS on specifications resulting in DC/DC power supply designs with higher overall efficiency. 9 A, 80 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS ON . High power and current handling capability. SO-8 G SS S Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Note 1a - Pulsed Power Dissipation for Single Operation Note 1a Note 1b Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS3570 FDS3570 13’’ 5 6 7 8 Ratings 80 ±20 9 50 1 -55 to +150 50 25 Tape Width 12mm Fairchild Semiconductor Corporation 4 3 2 1 Units °C/W °C/W Quantity 2500 units FDS3570 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V mV/°C IGSSF Gate-Body Leakage Current Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR VGS = -20 V, VDS = 0 V -100 nA On Characteristics Note 2 VGS th |
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