FDS3170N7

FDS3170N7 Datasheet

FDS3170N7

Part	Datasheet
FDS3170N7	FDS3170N7 (pdf)

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FDS3170N7 May 2003 FDS3170N7 100V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 100 V. RDS ON = 26 VGS = 10 V RDS ON = 28 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS3170N7 FDS3170N7 13’’ Ratings 100 ± 20 60 to +150 Tape width 12mm Units W °C °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS3170N7 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= A Drain-Source Avalanche Current 360 mJ Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2

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FDS3170N7

May 2003

FDS3170N7
100V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 100 V. RDS ON = 26 VGS = 10 V RDS ON = 28 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS3170N7

FDS3170N7
13’’

Ratings
100 ± 20 60 to +150

Tape width 12mm

Units

W °C
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS3170N7

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= A

Drain-Source Avalanche Current
360 mJ

Off Characteristics

BVDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 80 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

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Datasheet ID: FDS3170N7 514293