AO4454L
AO4454L Datasheet
AO4454L
| Part | Datasheet |
|---|---|
AO4454L |
AO4454L (pdf) |
| PDF Datasheet Preview |
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| AO4454L 100V N-Channel MOSFET SDMOS TM Product Summary The AO4454L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 7V 100% UIS Tested 100% Rg Tested 100V 6.5A < < SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 46 28 39 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units V A mJ W °C Units °C/W °C/W °C/W Page 1 of 6 AO4454L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS |
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