FDR858P

FDR858P Datasheet

FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Part	Datasheet
FDR858P	FDR858P (pdf)

PDF Datasheet Preview
February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications load switching and power management, battery charging circuits, and DC/DC conversion. -8 A, -30 V. RDS ON = VGS = -10 V, RDS ON = VGS = V. Low gate charge 21nC typical . High performance trench technology for extremely low RDS ON . SuperSOTTM-8 package small footprint 40% less than SO-8 low profile 1mm thick maximum power comperable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 SuperSOT -8 Mark 858P Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Draint Current - Continuous - Pulsed Note 1 Maximum Power Dissipation Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1999 Fairchild Semiconductor Corporation 5 6 7 8 Ratings -30 ±20 -8 -50 1 -55 to 150 70 20 4 3 2 1 Units V A °C °C/W °C/W

PDF Datasheet Preview

February 1999

FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications load switching and power management, battery charging circuits, and DC/DC conversion.
-8 A, -30 V. RDS ON = VGS = -10 V, RDS ON = VGS = V.

Low gate charge 21nC typical .

High performance trench technology for extremely low RDS ON .

SuperSOTTM-8 package small footprint 40% less than SO-8 low profile 1mm thick maximum power comperable to SO-8.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223

SOIC-16

SuperSOT -8

Mark 858P

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Draint Current - Continuous
- Pulsed

Note 1

Maximum Power Dissipation

Note 1a Note 1b

Note 1c

TJ,TSTG Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Case Note 1
1999 Fairchild Semiconductor Corporation
5 6 7 8

Ratings -30 ±20 -8 -50 1
-55 to 150
70 20
4 3 2 1

Units V A
°C °C/W °C/W

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Datasheet ID: FDR858P 514286