C3M0075120J

C3M0075120J Datasheet

C3M0075120J

Part	Datasheet
C3M0075120J	C3M0075120J (pdf)

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1200 V C3M0075120J Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS on N-Channel Enhancement Mode Package • C3MTM SiC MOSFET technology • Low impedance package with driver source pin • 7mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency TAB Drain 1 2 34 5 6 7 G KS S Drain TAB Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4,5,6,7 • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Part Number C3M0075120J Package TO-263-7 Marking C3M0075120J Maximum Ratings TC = 25 unless otherwise specified Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage dynamic Gate - Source Voltage static Continuous Drain Current 1200 -8/+19 -4/+15 ID pulse Pulsed Drain Current Power Dissipation TJ , Tstg Operating Junction and Storage Temperature Solder Temperature Note 1 When using MOSFET Body Diode VGSmax = -4V/+19V Note 2 MOSFET can also safely operate at 0/+15 V -55 to +150 Unit Test Conditions V VGS = 0 V, ID = 100 uA V AC f >1 Hz V Static VGS = 15 V, TC = A

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1200 V

C3M0075120J

Silicon Carbide Power MOSFET TM

C3M MOSFET Technology

RDS on

N-Channel Enhancement Mode

Package
• C3MTM SiC MOSFET technology
• Low impedance package with driver source pin
• 7mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
•
•
• Reduce switching losses and minimize gate ringing
• Higher system efficiency
• Reduce cooling requirements
• Increase power density
• Increase system switching frequency

TAB Drain
1 2 34 5 6 7 G KS S

Drain TAB

Gate Pin 1

Driver Source Pin 2

Power Source Pin 3,4,5,6,7
• Renewable energy
• EV battery chargers
• High voltage DC/DC converters
• Switch Mode Power Supplies

Part Number C3M0075120J

Package TO-263-7

Marking C3M0075120J

Maximum Ratings TC = 25 unless otherwise specified

Parameter

Value

VDSmax VGSmax VGSop

Drain - Source Voltage Gate - Source Voltage dynamic Gate - Source Voltage static

Continuous Drain Current
1200 -8/+19 -4/+15

ID pulse Pulsed Drain Current

Power Dissipation

TJ , Tstg Operating Junction and Storage Temperature

Solder Temperature

Note 1 When using MOSFET Body Diode VGSmax = -4V/+19V Note 2 MOSFET can also safely operate at 0/+15 V
-55 to +150

Unit

Test Conditions

V VGS = 0 V, ID = 100 uA V AC f >1 Hz V Static

VGS = 15 V, TC = A

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Datasheet ID: C3M0075120J 506943