FDR8521L

FDR8521L Datasheet

FDR8521L

Part	Datasheet
FDR8521L	FDR8521L (pdf)

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FDR8521L August 2000 FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET Q1 together with a large P-Channel Power MOSFET Q2 in a single SO-8 package. Applications • Power management • Load switch DROP A.R ON DROP A.R ON DROP A.R ON DROP V,I = A.R ON • Control MOSFET Q1 includes Zener protection for ESD ruggedness >6kV Human Body Model . • High density cell design for extremely low on-resistance. pin 1 SuperSOT TM-8 5 VOU T,C1,CO 6 VOU T,C1 ,CO 4 VIN,R1,Ci 3 R1,R2,C1 2 C1,CO VON/ OFF See Application Cir cuit EQUIVALENT CIRCUIT VDR OP ON/ OFF Absolute Maxim um Ratings TA=25oC unless otherwise noted VIN V O N/O FF ID PD TJ, Tstg ESD Parameter Input Voltage Range Note 1 On/Off Voltage Range Load Current - Continuous Note 2 - Pulsed Maximum Power Dissipation Package Marking and Ordering Information Device Marking Device Reel Size 8521L FDR8521L 13’’ 156 40 Tape width 12mm °C/W °C/W Quantity 3000 units Fairchild Semiconductor International FDR8521L Electrical Characteristics TA=25oC unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF Characteristics Forward Leakage Current VIN = 20 V, VON/OFF = 250 µA ON Characteristics Note 3 VDROP Conduction Voltage VIN = 12 V, VON/OFF = V, IL = 1 A VIN = 5 V, VON/OFF = V, IL = 1 A VIN = 12 V, VON/OFF = V, IL = A VIN = 5 V, VON/OFF = V, IL = A Q2 - Static On-Resistance VGS = -12 V, ID = A VGS = -5 V, ID = A Load Current VDROP = V, VIN = 12 V, VON/OFF = V VDROP = V, VIN = 5 V, VON/OFF = V Range of VIN can be up to 25V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -20V. is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. is guaranteed by design while is determined by the user’s board design. Pulse Test Pulse Width < 300µs, Duty Cycle < FDR8521L Load Switch Application APPLICATION CIRCUIT ON/OFF LOAD External Component Recommendation For applications where Co 1µF. For slew rate control, select R2 in the range of 470 - For additional in-rush current control,C1 1000pF can be added. Select R1 so that the R1/R2 ratio ranges from 10 - R1 is required to turn Q2 off. FDR8521L Typical Characteristics continued VDROP V

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FDR8521L

August 2000

FDR8521L

P-Channel MOSFET With Gate Driver For Load Switch Application

This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to operate from 3V to 20V input and supply up to 2.9A, the device features a small N-Channel MOSFET Q1 together with a large P-Channel Power MOSFET Q2 in a single SO-8 package.

Applications
• Power management
• Load switch

DROP

A.R ON

DROP

A.R ON

DROP

A.R ON

DROP

V,I =

A.R ON
• Control MOSFET Q1 includes Zener protection for

ESD ruggedness >6kV Human Body Model .
• High density cell design for extremely low on-resistance.
pin 1

SuperSOT TM-8
5 VOU T,C1,CO
6 VOU T,C1 ,CO
4 VIN,R1,Ci
3 R1,R2,C1
2 C1,CO

VON/ OFF

See Application Cir cuit

EQUIVALENT CIRCUIT

VDR OP

ON/ OFF

Absolute Maxim um Ratings TA=25oC unless otherwise noted

VIN V O N/O FF ID

PD TJ, Tstg ESD

Parameter

Input Voltage Range

Note 1

On/Off Voltage Range

Load Current - Continuous

Note 2
- Pulsed

Maximum Power Dissipation
Package Marking and Ordering Information

Device Marking

Device

Reel Size
8521L

FDR8521L
13’’
156 40

Tape width 12mm
°C/W °C/W

Quantity 3000 units

Fairchild Semiconductor International

FDR8521L

Electrical Characteristics TA=25oC unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

OFF Characteristics

Forward Leakage Current VIN = 20 V, VON/OFF = 250 µA

ON Characteristics Note 3

VDROP

Conduction Voltage

VIN = 12 V, VON/OFF = V, IL = 1 A

VIN = 5 V, VON/OFF = V, IL = 1 A

VIN = 12 V, VON/OFF = V, IL = A

VIN = 5 V, VON/OFF = V, IL = A

Q2 - Static On-Resistance VGS = -12 V, ID = A

VGS = -5 V, ID = A

Load Current

VDROP = V, VIN = 12 V, VON/OFF = V

VDROP = V, VIN = 5 V, VON/OFF = V

Range of VIN can be up to 25V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -20V. is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. is guaranteed by design while is determined by the user’s board design. Pulse Test Pulse Width < 300µs, Duty Cycle <

FDR8521L Load Switch Application

APPLICATION CIRCUIT

ON/OFF

LOAD

External Component Recommendation For applications where Co 1µF. For slew rate control, select R2 in the range of 470 - For additional in-rush current control,C1 1000pF can be added. Select R1 so that the R1/R2 ratio ranges from 10 - R1 is required to turn Q2 off.

FDR8521L

Typical Characteristics continued

VDROP V

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Datasheet ID: FDR8521L 514285