FDR8308P

FDR8308P Datasheet

FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

Part	Datasheet
FDR8308P	FDR8308P (pdf)

PDF Datasheet Preview
November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications load switching and power management, battery charging circuits, and DC/DC conversion. A, -20 V. RDS ON = VGS = V, RDS ON = VGS = V. Low gate charge 13nC typical . High performance trench technology for extremely low RDS ON . SuperSOTTM-8 package small footprint 40% less than SO-8 low profile 1mmthick maximum power comparable to SO-8. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 8308P pin 1 SuperSOT TM-8 SOIC-16 4 3 2 1 Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Draint Current - Continuous - Pulsed Note 1 Maximum Power Dissipation Note 1 TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1 Thermal Resistance, Junction-to-Case Note 1 1998 Fairchild Semiconductor Corporation FDR8308P -20 ±8 -20 -55 to 150 156 40 Units V A W °C °C/W °C/W

PDF Datasheet Preview

November 1998

FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for portable electronics applications load switching and power management, battery
charging circuits, and DC/DC conversion.

A, -20 V. RDS ON = VGS = V, RDS ON = VGS = V.

Low gate charge 13nC typical .

High performance trench technology for extremely low RDS ON .

SuperSOTTM-8 package small footprint 40% less than SO-8 low profile 1mmthick maximum power comparable to SO-8.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8

SOT-223
8308P
pin 1

SuperSOT TM-8

SOIC-16
4 3 2 1

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Draint Current - Continuous
- Pulsed

Note 1

Maximum Power Dissipation

Note 1

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient Note 1

Thermal Resistance, Junction-to-Case Note 1
1998 Fairchild Semiconductor Corporation

FDR8308P -20 ±8 -20
-55 to 150
156 40

Units V A

W °C
°C/W °C/W

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Datasheet ID: FDR8308P 514278