FDD8778

FDD8778 Datasheet

FDD8778/FDU8778 N-Channel MOSFET

Part	Datasheet
FDD8778	FDD8778 (pdf)

Related Parts	Information
FDU8778	FDU8778

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FDD8778/FDU8778 N-Channel MOSFET MPLEMENTATION March 2015 FDD8778/FDU8778 N-Channel MOSFET 25V, 35A, - Max rDS on = at VGS = 10V, ID = 35A - Max rDS on = at VGS = 4.5V, ID = 33A - Low gate charge Qg TOT = 12.6nC Typ , VGS = 10V - Low gate resistance This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - RoHS compliant AD FREE I Application - DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture I-PAK TO-251AA Short Lead I-PAK MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package Limited -Continuous Die Limited -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature Thermal Characteristics Note 1 Note 2 Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area Package Marking and Ordering Information Device Marking FDD8778 FDU8778 Device FDD8778 FDU8778 FDU8778_F071 Package TO-252AA TO-251AA TO-251AA Reel Size 13’’ N/A Tube N/A Tube 2006 Fairchild Semiconductor Corporation Ratings 25 ±20 35 40 145 24 39 -55 to 175 Units V mJ W °C °C/W °C/W °C/W Tape Width 16mm N/A N/A Quantity 2500 units 75 units 75 units FDD8778/FDU8778 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C Zero Gate Voltage Drain Current Gate to Source Leakage Current VDS = 20V, VGS = 0V VGS = ±20V TJ = 150°C On Characteristics VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C VGS = 10V, ID = 35A rDS on Drain to Source On Resistance

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FDD8778/FDU8778 N-Channel MOSFET

MPLEMENTATION

March 2015

FDD8778/FDU8778 N-Channel MOSFET
25V, 35A,
- Max rDS on = at VGS = 10V, ID = 35A - Max rDS on = at VGS = 4.5V, ID = 33A - Low gate charge Qg TOT = 12.6nC Typ , VGS = 10V - Low gate resistance

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.
- RoHS compliant

AD FREE I

Application
- DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

I-PAK

TO-251AA

Short Lead I-PAK

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package Limited
-Continuous Die Limited
-Pulsed

EAS PD TJ, TSTG

Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature

Thermal Characteristics

Note 1 Note 2

Thermal Resistance, Junction to Case TO-252,TO-251

Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
Package Marking and Ordering Information

Device Marking FDD8778 FDU8778

Device FDD8778 FDU8778 FDU8778_F071

Package TO-252AA TO-251AA TO-251AA

Reel Size 13’’

N/A Tube N/A Tube
2006 Fairchild Semiconductor Corporation

Ratings 25 ±20 35 40 145 24 39
-55 to 175

Units V
mJ W °C
°C/W
°C/W
°C/W

Tape Width 16mm N/A N/A

Quantity 2500 units
75 units 75 units

FDD8778/FDU8778 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V

Breakdown Voltage Temperature Coefficient

ID = 250µA, referenced to 25°C

Zero Gate Voltage Drain Current Gate to Source Leakage Current

VDS = 20V, VGS = 0V

VGS = ±20V

TJ = 150°C

On Characteristics

VGS th

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

Gate to Source Threshold Voltage Temperature Coefficient

ID = 250µA, referenced to 25°C

VGS = 10V, ID = 35A
rDS on

Drain to Source On Resistance

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Datasheet ID: FDD8778 514095