FDD5N50FTM-WS

FDD5N50FTM-WS Datasheet

FDD5N50F N-Channel MOSFET, FRFET

Part	Datasheet
FDD5N50FTM-WS	FDD5N50FTM-WS (pdf)

Related Parts	Information
FDD5N50FTF_WS	FDD5N50FTF_WS

PDF Datasheet Preview
FDD5N50F N-Channel MOSFET, FRFET FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, • RDS on = VGS = 10V, ID = 1.75A • Low gate charge Typ. 11nC • Low Crss Typ. 5pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. D-PAK MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Note 1 Note 2 Note 1 Note 1 Note 3 Ratings 500 ±30 14 257 4 40 -55 to +150 300 Ratings 110 Units V A mJ A mJ V/ns W/oC Units oC/W 2007 Fairchild Semiconductor Corporation FDD5N50F N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD5N50F Device FDD5N50FTM Package D-PAK Reel Size 380mm Tape Width 16mm FDD5N50F FDD5N50FTF D-PAK 380mm 16mm Quantity 2500 2000 Electrical Characteristics Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to 25oC VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 1.75A VDS = 20V, ID = 1.75A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf

PDF Datasheet Preview

FDD5N50F N-Channel MOSFET, FRFET

FDD5N50F

N-Channel MOSFET, FRFET
500V, 3.5A,
• RDS on = VGS = 10V, ID = 1.75A
• Low gate charge Typ. 11nC
• Low Crss Typ. 5pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

December 2007

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection.

D-PAK

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol VDSS VGSS

IDM EAS IAR EAR dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC -Continuous TC = 100oC
- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate above 25oC

TJ, TSTG TL

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Note 1 Note 2 Note 1 Note 1 Note 3

Ratings 500 ±30 14 257 4 40
-55 to +150 300

Ratings 110

Units V

A mJ A mJ V/ns W/oC

Units
oC/W
2007 Fairchild Semiconductor Corporation

FDD5N50F N-Channel MOSFET, FRFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking FDD5N50F

Device FDD5N50FTM

Package D-PAK

Reel Size 380mm

Tape Width 16mm

FDD5N50F

FDD5N50FTF

D-PAK
380mm
16mm

Quantity 2500 2000

Electrical Characteristics

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TJ = 25oC

ID = 250µA, Referenced to 25oC

VDS = 500V, VGS = 0V

VDS = 400V, TC = 125oC

VGS = ±30V, VDS = 0V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250µA VGS = 10V, ID = 1.75A VDS = 20V, ID = 1.75A

Note 4

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V f = 1MHz

VDS = 400V, ID = 5A VGS = 10V

Note 4, 5

Switching Characteristics
td on tr td off tf

More datasheets: EAPL3020WA6 | 44223 | FIT0240 | MT7H79P3E-C0046 | 3UOC | BXA40-48T05-12 | BXA40-48T05-12-M | 131-1701-216 | FIT0010 | FDD5N50FTF_WS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDD5N50FTM-WS Datasheet file may be downloaded here without warranties.

Datasheet ID: FDD5N50FTM-WS 514118