FDPF3860TYDTU

FDPF3860TYDTU Datasheet


FDPF3860T N-Channel MOSFET

Part Datasheet
FDPF3860TYDTU FDPF3860TYDTU FDPF3860TYDTU (pdf)
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FDPF3860T FDPF3860T FDPF3860T
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FDPF3860T N-Channel MOSFET

December 2013

FDPF3860T

N-Channel MOSFET
100 V, 20 A, mΩ
• RDS on = mΩ Typ. VGS = 10 V, ID = A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low

RDS on
• High Power and Current Handling Capability
• RoHS Compliant

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter

TO-220F

MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS

IDM EAS IAR EAR dv/dt

TJ, TSTG TL

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
- Continuous TC = 25oC - Continuous TC = 100oC - Pulsed

Note 1

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate Above 25oC

Note 3

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.

FDPF3860T 100 ±20 80 278 20 15
-55 to +150 300

FDPF3860T

Unit V

A mJ A mJ V/ns W/oC

Unit
oC/W
2008 Fairchild Semiconductor Corporation

FDPF3860T N-Channel MOSFET
Package Marking and Ordering Information

Part Number FDPF3860T

Top Mark FDPF3860T

Package TO-220F

Packing Method Tube

Reel Size N/A

Tape Width N/A

Electrical Characteristics TC = 25oC unless otherwise noted.

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250 uA, VGS = 0 V, TJ = 25oC ID = 250 uA, Referenced to 25oC

VDS = 80 V, VGS = 0 V VDS = 48 V, TC = 150oC VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250 uA VGS = 10 V, ID = A VDS = 10 V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = 25 V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf Qg tot Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge

VDD = 50 V, ID = A, VGS = 10 V, RG = 6 Ω VDS = 80 V, ID = A, VGS = 10 V

Note 4 Note 4

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = A

VGS = 0 V, ISD = A, dIF/dt = 100 A/us

Notes Repetitive rating pulse-width limited by maximum junction temperature.

L = 16 mH, IAS = A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. ISD A, di/dt 200 A/us, VDD BVDSS, starting TJ = 25°C. Essentially independent of operating temperature typical characteristics.

Min.
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Datasheet ID: FDPF3860TYDTU 514266