FDPF3860TYDTU
FDPF3860TYDTU Datasheet
FDPF3860T N-Channel MOSFET
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FDPF3860TYDTU |
FDPF3860TYDTU (pdf) |
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FDPF3860T |
FDPF3860T |
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| FDPF3860T N-Channel MOSFET December 2013 FDPF3860T N-Channel MOSFET 100 V, 20 A, mΩ • RDS on = mΩ Typ. VGS = 10 V, ID = A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS on • High Power and Current Handling Capability • RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. • Consumer Appliances • LCD/LED/PDP TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS IDM EAS IAR EAR dv/dt TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous TC = 25oC - Continuous TC = 100oC - Pulsed Note 1 Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate Above 25oC Note 3 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDPF3860T 100 ±20 80 278 20 15 -55 to +150 300 FDPF3860T Unit V A mJ A mJ V/ns W/oC Unit oC/W 2008 Fairchild Semiconductor Corporation FDPF3860T N-Channel MOSFET Package Marking and Ordering Information Part Number FDPF3860T Top Mark FDPF3860T Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Electrical Characteristics TC = 25oC unless otherwise noted. Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 uA, VGS = 0 V, TJ = 25oC ID = 250 uA, Referenced to 25oC VDS = 80 V, VGS = 0 V VDS = 48 V, TC = 150oC VGS = ±20 V, VDS = 0 V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA VGS = 10 V, ID = A VDS = 10 V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qg tot Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 50 V, ID = A, VGS = 10 V, RG = 6 Ω VDS = 80 V, ID = A, VGS = 10 V Note 4 Note 4 Drain-Source Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage VGS = 0 V, ISD = A VGS = 0 V, ISD = A, dIF/dt = 100 A/us Notes Repetitive rating pulse-width limited by maximum junction temperature. L = 16 mH, IAS = A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. ISD A, di/dt 200 A/us, VDD BVDSS, starting TJ = 25°C. Essentially independent of operating temperature typical characteristics. Min. |
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