FDP15N65

FDP15N65 Datasheet

FDP15N65 / FDPF15N65 650V N-Channel MOSFET

Part	Datasheet
FDP15N65	FDP15N65 (pdf)

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FDP15N65 / FDPF15N65 650V N-Channel MOSFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET • 15A, 650V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability April 2007 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-220 FDP Series TO-220F FDPF Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. FDP15N65 FDPF15N65 ± 30 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking FDP15N65 FDPF15N65 Device FDP15N65 FDPF15N65 Package TO-220 TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA, TJ = 25°C Breakdown Voltage Temperature Coefficient ID = 250uA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V VDS = 520V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250uA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 7.5A Forward Transconductance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics

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FDP15N65 / FDPF15N65 650V N-Channel MOSFET

FDP15N65 / FDPF15N65
650V N-Channel MOSFET
• 15A, 650V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

April 2007

UniFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-220

FDP Series

TO-220F

FDPF Series

Absolute Maximum Ratings

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C
- Pulsed

Note 1

Gate-Source voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation

TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.

FDP15N65 FDPF15N65
± 30
-55 to +150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

FDP15N65 FDPF15N65

Device

FDP15N65 FDPF15N65

Package

TO-220 TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA, TJ = 25°C

Breakdown Voltage Temperature Coefficient

ID = 250uA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 650V, VGS = 0V

VDS = 520V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V

IGSSR

On Characteristics

VGS th

Gate Threshold Voltage

VDS = VGS, ID = 250uA

RDS on

Static Drain-Source On-Resistance

VGS = 10V, ID = 7.5A

Forward Transconductance

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics

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Datasheet ID: FDP15N65 514246