The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
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AT28BV16-25SC (pdf) |
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AT28BV16-25TC |
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AT28BV16-30TI |
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AT28BV16-30TC |
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AT28BV16-30SI |
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AT28BV16-30SC |
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AT28BV16-30PI |
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AT28BV16-30PC |
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AT28BV16-30JI |
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AT28BV16-25TI |
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AT28BV16-25SI |
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AT28BV16-25PI |
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AT28BV16-25PC |
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AT28BV16-25JI |
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AT28BV16-25JC |
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AT28BV16-30JC |
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• to 3.6V Supply Full Read and Write Operation • Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current • Read Access Time - 250 ns • Byte Write - 3 ms • Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP • High Reliability CMOS Technology Endurance 100,000 Cycles Data Retention 10 Years • Low Voltage CMOS Compatible Inputs and Outputs • JEDEC Approved Byte Wide Pinout • Commercial and Industrial Temperature Ranges The AT28BV16 is a low-power, high-performance Electrically Erasable and Program- mable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. continued 16K 2K x 8 Battery-Voltage Parallel EEPROMs AT28BV16 Pin Configurations Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect Don’t Connect OE 1 NC 2 A9 3 A8 4 NC 5 WE 6 VCC 7 RDY/BUSY 8 NC 9 A7 10 A6 11 A5 12 A4 13 A3 14 TSOP Top View 28 A10 27 CE 26 I/O7 25 I/O6 24 I/O5 23 I/O4 22 I/O3 21 GND 20 I/O2 19 I/O1 18 I/O0 17 A0 16 A1 15 A2 PDIP, SOIC Top View A7 1 A6 2 A5 3 A4 4 A3 5 A2 6 A1 7 A0 8 I/O0 9 I/O1 10 I/O2 11 GND 12 24 VCC 23 A8 22 A9 21 WE 20 OE 19 A10 18 CE 17 I/O7 16 I/O6 15 I/O5 14 I/O4 13 I/O3 PLCC Top View 4 A7 3 NC 2 NC 1 DC 32 VCC 31 WE 30 NC A6 5 A5 6 A4 7 A3 8 A2 9 A1 10 A0 11 NC 12 I/O0 13 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 21 I/O6 I/O1 14 I/O2 15 GND 16 DC 17 I/O3 18 I/O4 19 I/O5 20 The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin. The CMOS technology offers fast access times of 250 ns at low power dissipation. When the chip is deselected the standby current is less than 50 µA. Atmel’s 28BV16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of EEPROM are available for device identification or tracking. Block Diagram Absolute Maximum Ratings* Temperature Under Bias -55°C to +125°C Storage Temperature -65°C to +150°C All Input Voltages including NC Pins with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability AT28BV16 AT28BV16 Device Operation READ The AT28BV16 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. Ordering Information 1 tACC ns 250 ICC mA Active Standby Note See Valid Part Number table below. Ordering Code AT28BV16-25TC AT28BV16-25JC AT28BV16-25PC AT28BV16-25SC AT28BV16-25TI AT28BV16-25JI AT28BV16-25PI AT28BV16-25SI AT28BV16-30TC AT28BV16-30JC AT28BV16-30PC AT28BV16-30SC AT28BV16-30TI AT28BV16-30JI AT28BV16-30PI AT28BV16-30SI Package 28T 32J 24P6 24S 28T 32J 24P6 24S 28T 32J 24P6 24S 28T 32J 24P6 24S Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28BV16 JC, JI, PC, PI, SC, SI, TC, TI AT28BV16 JC, JI, PC, PI, SC, SI, TC, TI Die Products Reference Section Parallel EEPROM Die Products Operation Range Commercial 0°C to 70°C Industrial -40°C to 85°C Commercial 0°C to 70°C Industrial -40°C to 85°C 28T 32J 24P6 24S Package Type 28-Lead, Plastic Thin Small Outline Package TSOP 32-Lead, Plastic J-Leaded Chip Carrier PLCC 24-Lead, Wide, Plastic Dual Inline Package PDIP 24-Lead, Wide, Plastic Gull Wing Small Outline SOIC AT28BV16 Packaging Information 28T, 28-Lead, Plastic Thin Small Outline Package TSOP Dimensions in Millimeters and Inches * INDEX MARK AREA 0 5 REF *Controlling dimension millimeters 24P6, 24-Lead, Wide, Plastic Dual Inline Package PDIP Dimensions in Inches and Millimeters JEDEC STANDARD MS-011 AA SEATING PLANE 0 REF 15 AT28BV16 32J, 32-Lead, Plastic J-Leaded Chip Carier PLCC Dimensions in Inches and Millimeters JEDEC STANDARD MS-016 AE X 45° PIN NO. 1 IDENTIFY X 30° - 45° |
More datasheets: AT28BV16-25TC | AT28BV16-30TI | AT28BV16-30TC | AT28BV16-30SI | AT28BV16-30SC | AT28BV16-30PI | AT28BV16-30PC | AT28BV16-30JI | AT28BV16-25TI | AT28BV16-25SI |
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