FDMS8690
FDMS8690 Datasheet
FDMS8690 N-Channel Power MOSFET
| Part | Datasheet |
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FDMS8690 |
FDMS8690 (pdf) |
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| FDMS8690 N-Channel Power MOSFET February 2007 FDMS8690 N-Channel Power MOSFET 30V, 27A, - Max rDS on = at VGS = 10V, ID = 14.0A - Max rDS on = at VGS = 4.5V, ID = 11.5A - High performance trench technology for extremely low rDS on and gate charge - Minimal Qgd 2.9nC typical - RoHS Compliant This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS on has been maintained to provide an extremely versatile device. Application - High Efficiency DC-DC converters. - Notebook CPU power supply - Multi purpose Point of Load Pin 1 DD Power 56 Bottom view D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Ratings 30 ±20 27 52 14 100 -55 to +150 Units V W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8690 Device FDMS8690 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDMS8690 N-Channel Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V , VGS = 0V VGS = ±20V, VDS = 0V mV/°C ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 14.0A VGS = 4.5V, ID = 11.5A VGS = 10V, ID = 14.0A, TJ = 125°C mV/°C Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1260 1680 pF Switching Characteristics td on tr td off tf Qg TOT Qg 5 Qgs Qgd |
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