FDMS8690

FDMS8690 Datasheet


FDMS8690 N-Channel Power MOSFET

Part Datasheet
FDMS8690 FDMS8690 FDMS8690 (pdf)
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FDMS8690 N-Channel Power MOSFET

February 2007

FDMS8690

N-Channel Power MOSFET
30V, 27A,
- Max rDS on = at VGS = 10V, ID = 14.0A - Max rDS on = at VGS = 4.5V, ID = 11.5A - High performance trench technology for extremely low rDS on
and gate charge
- Minimal Qgd 2.9nC typical
- RoHS Compliant

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS on has been maintained to provide an extremely versatile device.

Application
- High Efficiency DC-DC converters. - Notebook CPU power supply - Multi purpose Point of Load

Pin 1

DD Power 56 Bottom view

D5 D6 D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current
-Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 1a

Ratings 30 ±20 27 52 14 100
-55 to +150

Units V

W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMS8690

Device FDMS8690

Package Power 56

Reel Size 13’’

Tape Width 12mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDMS8690 N-Channel Power MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C

VDS = 24V , VGS = 0V VGS = ±20V, VDS = 0V
mV/°C
±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On Resistance

VGS = VDS, ID = 250µA

ID = 250µA, referenced to 25°C

VGS = 10V, ID = 14.0A VGS = 4.5V, ID = 11.5A VGS = 10V, ID = 14.0A, TJ = 125°C
mV/°C

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
1260 1680 pF

Switching Characteristics
td on tr td off tf Qg TOT Qg 5 Qgs Qgd
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Datasheet ID: FDMS8690 514229