BLC8G27LS-245AVZ
BLC8G27LS-245AVZ Datasheet
BLC8G27LS-245AV
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BLC8G27LS-245AVZ |
BLC8G27LS-245AVZ (pdf) |
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| BLC8G27LS-245AV Power LDMOS transistor Product profile 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo board. VDS = 28 V IDq = 500 mA main VGS amp peak = V, unless otherwise specified. Test signal VDS PL AV ACPR dB % dBc 1-carrier W-CDMA 2500 to 2690 28 56 43 [1] [1] Test signal 3GPP test model 1 64 DPCH PAR = dB at probability on CCDF per carrier. Excellent ruggedness High-efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation 2500 MHz to 2700 MHz Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range BLC8G27LS-245AV Power LDMOS transistor Pinning information Table Pinning Pin Description 1 drain2 peak 2 drain1 main 3 gate1 main 4 gate2 peak 5 source 6 video decoupling main 7 n.c. 8 n.c. 9 video decoupling peak [1] Connected to flange. Ordering information Simplified outline Graphic symbol aaa-009150 Table Ordering information Type number Package Name Description BLC8G27LS-245AV - air cavity plastic earless flanged package 8 leads Version SOT1251-2 Limiting values Table Limiting values In accordance with the Absolute Maximum Rating System IEC Parameter Conditions VDS VGS amp main VGS amp peak Tstg Tj drain-source voltage main amplifier gate-source voltage peak amplifier gate-source voltage storage temperature junction temperature Min [1] - Max 65 +13 +13 +150 225 Unit V C C [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. Thermal characteristics Table Thermal characteristics Symbol Parameter Conditions Rth j-c thermal resistance from Tcase = 80 C PL = 56 W VDS = 28 V; junction to case IDq = 500 mA main VGS amp peak = V Typ Unit K/W BLC8G27LS-245AV#2 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. All rights reserved. 2 of 13 BLC8G27LS-245AV Power LDMOS transistor Characteristics Table DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Main device V BR DSS drain-source breakdown voltage VGS = 0 V ID = mA VGS th gate-source threshold voltage VDS = 10 V ID = 180 mA VGSq Ordering information 2 Limiting values. 2 Thermal characteristics 2 Characteristics 3 Test information 3 Ruggedness in class-AB operation 3 Impedance information 4 VBW in Doherty operation 5 Test circuit. 5 Graphical data 6 CW 6 CW pulsed 6 1-Carrier W-CDMA 7 2-Carrier W-CDMA 8 2-Tone VBW 8 Package outline 9 Handling information. 10 Abbreviations 10 Legal information. 11 Data sheet status 11 Definitions 11 Disclaimers 11 Trademarks. 12 Contact information. 12 Contents 13 BLC8G27LS-245AV Power LDMOS transistor Please be aware that important notices concerning this document and the product s described herein, have been included in section ‘Legal information’. Ampleon The Netherlands B.V. All rights reserved. For more information, please visit For sales office addresses, please visit: Date of release 1 September 2015 Document identifier BLC8G27LS-245AV#2 |
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