FDMS8674
FDMS8674 Datasheet
FDMS8674 N-Channel MOSFET
| Part | Datasheet |
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FDMS8674 |
FDMS8674 (pdf) |
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| FDMS8674 N-Channel MOSFET May 2009 FDMS8674 tm N-Channel 30V, 21A, 5.0m: - Max rDS on = 5.0m at VGS = 10V, ID = 17A - Max rDS on = 8.0m at VGS = 4.5V, ID = 14A - Advanced Package and Silicon combination for low rDS on and high efficiency - MSL1 robust package design - RoHS Compliant The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. - Computing VR & IMVP Vcore - Secondary Side Synchronous Rectifier - POL DC/DC Converter - Oring FET/ Load Switch Bottom Pin 1 S D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 30 ±20 21 94 17 150 181 78 -55 to +150 Units V mJ W °C RTJC RTJA Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8674 Device FDMS8674 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units 2009 Fairchild Semiconductor Corporation FDMS8674 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250PA, VGS = 0V ID = 250PA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250PA ID = 250PA, referenced to 25°C mV/°C VGS = 10V, ID = 17A VGS = 4.5V, ID = 14A VGS = 10V, ID = 17A, TJ = 125°C VDD = 10V, ID = 17A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1745 2320 pF 860 1145 Switching Characteristics |
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