FJC1386PTF

FJC1386PTF Datasheet


FJC1386 PNP Epitaxial Silicon Transistor

Part Datasheet
FJC1386PTF FJC1386PTF FJC1386PTF (pdf)
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FJC1386RTF FJC1386RTF FJC1386RTF
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FJC1386 PNP Epitaxial Silicon Transistor

July 2005

FJC1386

PNP Epitaxial Silicon Transistor

Low Saturation Transistor Medium Power Amplifier
• Complement to FJC2098
• High Collector Current
• Low Collector-Emitter Saturation Voltage

Marking

SOT-89

Base Collector Emitter

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Power Dissipation Ta = 25°C Junction Temperature Storage Temperature

Weekly code Year code hFE grage

Value
-30 -20 -6 -5 150 -55 to +150

Units

V A W °C °C

Electrical Characteristics Ta = 25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCB = -20V, VB = 0 VEB = -5V, IC = 0 VCE = -2V, IC =-0.5A IC = -4A, IB = -0.1A IC = -4A, IB = -0.1A

Min.
-30 -20 -6

Max.

Units

V µA µA
2005 Fairchild Semiconductor Corporation

FJC1386 PNP Epitaxial Silicon Transistor

Thermal Characteristics Ta = 25°C unless otherwise noted

Parameter

Thermal Resistance, Junction to Ambient
hFE Classification

Classification
80 ~ 180
120 ~ 270
Package Marking and Ordering Information

Device Marking
1386

Device

FJC1386

Package

SOT-89

Reel Size
13”

Max.

Units
°C/W
180 ~ 390

Tape Width

Quantity
4,000

FJC1386 PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure Static Characteristic

IC [mA], COLLECTOR CURRENT
-1400 -1200 -1000
-800

IB = -7mA IB = -6mA IB = -5mA IB = -4mA
-600

IB = -3mA
-400

IB = -2mA
-200

IB = -1mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Collector-Emitter Saturation Voltage
-10 -1
-100m -10m

IC = 10 IB

Ta = 125oC

Ta = 25oC

Ta = - 40oC
hFE, DC CURRENT GAIN

Figure DC Current Gain
1000

Ta = 125oC Ta = 25oC
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Datasheet ID: FJC1386PTF 514705