FJC1386RTF
FJC1386RTF Datasheet
FJC1386 PNP Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
FJC1386RTF |
FJC1386RTF (pdf) |
| Related Parts | Information |
|---|---|
FJC1386PTF |
FJC1386PTF |
FJC1386QTF |
FJC1386QTF |
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| FJC1386 PNP Epitaxial Silicon Transistor July 2005 FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking SOT-89 Base Collector Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Power Dissipation Ta = 25°C Junction Temperature Storage Temperature Weekly code Year code hFE grage Value -30 -20 -6 -5 150 -55 to +150 Units V A W °C °C Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat VBE sat Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCB = -20V, VB = 0 VEB = -5V, IC = 0 VCE = -2V, IC =-0.5A IC = -4A, IB = -0.1A IC = -4A, IB = -0.1A Min. -30 -20 -6 Max. Units V µA µA 2005 Fairchild Semiconductor Corporation FJC1386 PNP Epitaxial Silicon Transistor Thermal Characteristics Ta = 25°C unless otherwise noted Parameter Thermal Resistance, Junction to Ambient hFE Classification Classification 80 ~ 180 120 ~ 270 Package Marking and Ordering Information Device Marking 1386 Device FJC1386 Package SOT-89 Reel Size 13” Max. Units °C/W 180 ~ 390 Tape Width Quantity 4,000 FJC1386 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic IC [mA], COLLECTOR CURRENT -1400 -1200 -1000 -800 IB = -7mA IB = -6mA IB = -5mA IB = -4mA -600 IB = -3mA -400 IB = -2mA -200 IB = -1mA VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Collector-Emitter Saturation Voltage -10 -1 -100m -10m IC = 10 IB Ta = 125oC Ta = 25oC Ta = - 40oC hFE, DC CURRENT GAIN Figure DC Current Gain 1000 Ta = 125oC Ta = 25oC |
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