FDMS8670
FDMS8670 Datasheet
FDMS8670 N-Channel Power MOSFET
| Part | Datasheet |
|---|---|
FDMS8670 |
FDMS8670 (pdf) |
| PDF Datasheet Preview |
|---|
| FDMS8670 N-Channel Power MOSFET May 2009 FDMS8670 tm N-Channel Power 30V, 42A, 2.6m: - Max rDS on = 2.6m at VGS = 10V, ID = 24A - Max rDS on = 3.8m at VGS = 4.5V, ID = 18A - 100% UIL Tested - RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power process that has been especially tailored to minimize on-resistance. This part exhibits industry leading switching FOM RDS*Qgd to enhance DC-DC synchronous rectifier efficiency. Application - DC - DC Conversion Bottom Pin 1 S Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 30 ±20 42 135 24 150 288 78 -55 to +150 Units V mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8670 Device FDMS8670 Package Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units 2009 Fairchild Semiconductor Corporation FDMS8670 N-Channel Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250PA, VGS = 0V ID = 250PA, referenced to 25°C VGS = 0V, VDS = 24V, VGS = ±20V, VDS = 0V Min Typ Max Units mV/°C ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250PA ID = 250PA, referenced to 25°C mV/°C VGS = 10V, ID = 24A VGS = 4.5V, ID = 18A VGS = 10V, ID = 24A, TJ = 125°C VDD = 5V, ID = 24A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 2965 3940 pF 1395 1855 pF Switching Characteristics td on tr td off tf Qg Qgs Qgd |
| More datasheets: CTS100ELT23TG | DS40 | FFP04U40DNTU | FIN1048MTC | FIN1048M | BDV65-S | BDV65A-S | BDV65B-S | BDV65C-S | OPK21003 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDMS8670 Datasheet file may be downloaded here without warranties.