BDV65B-S

BDV65B-S Datasheet

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS

Part	Datasheet
BDV65B-S	BDV65B-S (pdf)

Related Parts	Information
BDV65-S	BDV65-S
BDV65A-S	BDV65A-S
BDV65C-S	BDV65C-S

PDF Datasheet Preview
BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BDV65 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg TL NOTES This value applies for tp ms, duty cycle 10% Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. VALUE 60 80 100 120 60 80 100 120 5 12 15 125 -65 to +150 -65 to +150 260 UNIT V A W °C °C °C PRODUCT INFORMATION BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDV65 Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 see Note 4 BDV65A BDV65B BDV65C VCB = 30 V IB = 0 BDV65 ICEO Collector-emitter cut-off current

PDF Datasheet Preview

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C
● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

SOT-93 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRAAA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BDV65

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Operating junction temperature range Storage temperature range Lead temperature mm from case for 10 seconds

BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C

VCBO

VCEO

VEBO IC ICM IB Ptot Tj Tstg TL

NOTES This value applies for tp ms, duty cycle 10% Derate linearly to 150°C case temperature at the rate of W/°C.

Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

VALUE
60 80 100 120 60 80 100 120 5 12 15 125 -65 to +150 -65 to +150 260

UNIT

V A W °C °C °C

PRODUCT INFORMATION

BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDV65

Collector-emitter V BR CEO breakdown voltage

IC = 30 mA

IB = 0
see Note 4

BDV65A

BDV65B

BDV65C

VCB = 30 V

IB = 0

BDV65

ICEO

Collector-emitter cut-off current

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Datasheet ID: BDV65B-S 522122