FDMS2380
FDMS2380 Datasheet
FDMS2380 Dual Integrated Solenoid Driver
| Part | Datasheet |
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FDMS2380 |
FDMS2380 (pdf) |
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| FDMS2380 Dual Integrated Solenoid Driver August 2007 FDMS2380 Dual Integrated Solenoid Driver - 5A, 60V Load Clamp - rDS ON = 30mΩ Typ. Excitation path - 6V to 26V Operation - CMOS Compatible - Soft Short Detection - Thermal Shutdown - Diagnostic Output - Integrated Clamps - Over-current Protection - Open Load Detection - Over-voltage Protection - Transmission Solenoid Driver - Inductive Load Management The FDMS2380 is an intelligent low side driver with built in recirculation and demagnetization circuits designed specifically for driving inductive loads. The inputs are CMOS compatible. A separate diagnostic signal for each channel provides the system with an indication of the operation of the solenoid or the presence of a protection fault condition. Built-in Over-voltage, Over-current, Overtemperature circuits protect the device from these conditions. Additional diagnostic circuitry is included for detecting Open Load, Under-voltage and output ground fault conditions. The FDMS2380 contains two independent intelligent low side solenoid drivers. Pin 1 Power QFN Internal Logical Block Diagram One of two Identical Channels VBATT INA INB DIAG Volt Regulator & Over / Under Voltage Detect Control Logic Soft Short & Recirculation Over Temp Shutdown Open Load Detect PDMOS Driver & Clamp Diagnostic Control & Pulse Generation Over Current Shutdown NDMOS Driver Power PDMOS Recirculation Device Power NDMOS Excitation Device 2007 Fairchild Semiconductor Corporation FDMS2380 Dual Integrated Solenoid Driver Pin Assignment OUT2 1 GND2 2 OUT2 3 VBATT 4 OUT1 5 DIAG1 6 INB1 7 INA1 8 OUT1 9 OUT2 VBATT 18 OUT2 17 INA2 16 INB2 15 DIAG2 14 OUT2 13 VBATT 12 OUT1 OUT1 11 GND1 TOP VIEW Ordering Information Part Number FDMS2380 Package 18 pin QFN Packing Method Tape & Reel Reel Size 330mm Tape Width 24mm Quantity 2000 Notes is measured with in2 copper on FR-4 board. is guaranteed by design while is determined by the user’s board design. The FDMS2380 requires one or more high quality local bypass capacitors i.e., low ESL, low ESR and located physically close to the VBATT/Ground terminals of the device to prevent fast transients on the VBATT line from affecting the operation of the device. More specifically, the bypass scheme must reduce transients with an amplitude passing through VBATT ov to have a rise time of less than 2.2V/µs. FDMS2380 Dual Integrated Solenoid Driver Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VBATT Oper Operating Supply Voltage Supply Quiescent Current Output Leakage Current --VBATT = 13V, VINA = VINB = 5V VBATT = 18V, VINA = VINB = 1.5V On Characteristics rDS ON On Resistance - Excitation Path VRecir sat Saturation Voltage - Recirculation Path VBATT = 13V, VINA = VINB = 5V, IOUT = 5A TC = 150oC VBATT = 13V, VINA = 5V, VINB = 0V, IOUT = 10A - Ω - Ω Switching Characteristics Excitation Path td ON td OFF tr tf Output Turn-On Delay Time Output Turn-Off Delay Time Rise Time Fall Time VBATT = 14V, RLoad = Logic Input Characteristics Input Low Level Voltage Input High Level Voltage Input Clamp Voltage Input Current each input ----IIN <=10mA VINA = VINB = 5V VINA = VINB = 1.5V 90 160 uA |
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