FDMC8678S

FDMC8678S Datasheet

FDMC8678S N-Channel Power SyncFETTM

Part	Datasheet
FDMC8678S	FDMC8678S (pdf)

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FDMC8678S N-Channel Power SyncFETTM July 2009 FDMC8678S tm N-Channel Power SyncFETTM 30V, 18A, - Max rDS on = at VGS = 10V, ID = 15A - Max rDS on = at VGS = 4.5V, ID = 12A - Advanced Package and Silicon combination for low rDS on and high efficiency - SyncFET Schottky Body Diode The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. - MSL1 robust package design - RoHS Compliant Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Telecom secondary side rectification Pin 1 D5 D6 4G 3S Power 33 BOTTOM D7 D8 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 30 ±20 18 66 15 60 181 41 -55 to +150 Units V mJ W °C Package Marking and Ordering Information Note 1a °C/W Device Marking 8678S Device FDMC8678S Package Power 33 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units 2009 Fairchild Semiconductor Corporation FDMC8678S N-Channel Power SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 1mA, referenced to 25°C VGS = 0V, VDS = 24V, VGS = ±20V, VDS = 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 1mA, referenced to 25°C VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 10V, ID = 15A, TJ = 125°C VDD = 10V, ID = 15A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 15V, ID = 15A, VGS = 10V, RGEN = VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V,

PDF Datasheet Preview

FDMC8678S N-Channel Power SyncFETTM

July 2009

FDMC8678S tm

N-Channel Power SyncFETTM
30V, 18A,
- Max rDS on = at VGS = 10V, ID = 15A - Max rDS on = at VGS = 4.5V, ID = 12A - Advanced Package and Silicon combination for low rDS on
and high efficiency
- SyncFET Schottky Body Diode

The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
- MSL1 robust package design - RoHS Compliant

Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch
- Networking Point of Load low side switch
- Telecom secondary side rectification

Pin 1

D5 D6
4G 3S

Power 33

BOTTOM

D7 D8
2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 30 ±20 18 66 15 60 181 41
-55 to +150

Units V
mJ W °C
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking 8678S

Device FDMC8678S

Package Power 33

Reel Size 13’’

Tape Width 12 mm

Quantity 3000 units
2009 Fairchild Semiconductor Corporation

FDMC8678S N-Channel Power SyncFETTM

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 1mA, VGS = 0V

ID = 1mA, referenced to 25°C

VGS = 0V, VDS = 24V, VGS = ±20V, VDS = 0V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 1mA

ID = 1mA, referenced to 25°C

VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A VGS = 10V, ID = 15A, TJ = 125°C VDD = 10V, ID = 15A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge

VDD = 15V, ID = 15A, VGS = 10V, RGEN =

VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V,

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Datasheet ID: FDMC8678S 514202