FDMC86106LZ
FDMC86106LZ Datasheet
FDMC86106LZ N-Channel Shielded Gate MOSFET
| Part | Datasheet |
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FDMC86106LZ |
FDMC86106LZ (pdf) |
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| FDMC86106LZ N-Channel Shielded Gate MOSFET FDMC86106LZ N-Channel Shielded Gate MOSFET 100 V, A, 103 mΩ November 2013 - Shielded Gate MOSFET Technology - Max rDS on = 103 mΩ at VGS = 10 V, ID = A - Max rDS on = 153 mΩ at VGS = V, ID = A - HBM ESD protection level > 3 KV typical Note 4 - 100% UIL Tested - RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Application - DC - DC Conversion Bottom 8765 1 234 MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 100 ±20 15 12 19 -55 to +150 Units V mJ W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMC86106Z Device FDMC86106LZ Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units 2011 Fairchild Semiconductor Corporation FDMC86106LZ N-Channel Shielded Gate MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 uA, VGS = 0 V ID = 250 uA, referenced to 25 °C VDS = 80 V, VGS = 0 V VGS = ±20 V, VDS = 0 V mV/°C ±10 uA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 uA ID = 250 uA, referenced to 25 °C mV/°C VGS = 10 V, ID = A VGS = V, ID = A VGS = 10 V, ID = A, TJ = 125 °C VDS = 5 V, ID = A 153 mΩ Dynamic Characteristics Ciss Coss Crss Rg VDS = 50 V, VGS = 0 V, f = 1 MHz |
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