FDM2509NZ
FDM2509NZ Datasheet
FDM2509NZ
| Part | Datasheet |
|---|---|
FDM2509NZ |
FDM2509NZ (pdf) |
| PDF Datasheet Preview |
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| FDM2509NZ February 2006 FDM2509NZ Monolithic Common Drain N-Channel 2.5V Specified MOSFET This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. • Li-Ion Battery Pack PIN 1 S1 G1 • A, 20 V RDS ON = 18 VGS = V RDS ON = 24 VGS = V • ESD protection diode note 3 • Low Profile 0.8mm maximum in the new package MicroFET 2x5 mm Bottom Drain Contact G2 4 Q2 S2 G2 MLP 2x5 Q1 1 S1 Bottom Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Steady State Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Drain Package Marking and Ordering Information Device Marking Device Reel Size 2509Z FDM2509NZ 7’’ Ratings 20 ±12 30 to +150 Tape width 12mm Units V A W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDM2509NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS IGSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Leakage, VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V mV/°C ±10 On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance VDS = VGS, |
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