FDMB506P

FDMB506P Datasheet

FDMB506P

Part	Datasheet
FDMB506P	FDMB506P (pdf)

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FDMB506P December 2005 FDMB506P P-Channel 1.8V Logic Level MOSFET This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. • Load switch • DC/DC Conversion • A, RDS ON = 30 VGS = RDS ON = 38 VGS = RDS ON = 70 VGS = • Low profile mm maximum • Fast switching • RoHS compliant PIN 1 GATE SOURCE MicroFET 3x1.9 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDMB506P 7’’ S5 D6 D7 D8 4G 3D 2D 1D Ratings ±8 70 to +150 65 208 Tape width 8mm Units W °C °C/W Quantity 3000 units 2005 Fairchild Semiconductor Corporation FDMB506P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ± 8 V, VDS = 0 V V mV/°C ±100 On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient

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FDMB506P

December 2005

FDMB506P

P-Channel 1.8V Logic Level MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
• Load switch
• DC/DC Conversion
• A, RDS ON = 30 VGS = RDS ON = 38 VGS = RDS ON = 70 VGS =
• Low profile mm maximum
• Fast switching
• RoHS compliant

PIN 1

GATE

SOURCE

MicroFET
3x1.9

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDMB506P
7’’

S5 D6 D7 D8
4G 3D 2D 1D

Ratings
±8 70 to +150
65 208

Tape width 8mm

Units

W °C
°C/W

Quantity 3000 units
2005 Fairchild Semiconductor Corporation

FDMB506P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = 0 V VGS = ± 8 V, VDS = 0 V

V mV/°C
±100

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDMB506P 514196