FDI8442
FDI8442 Datasheet
FDI8442 N-Channel MOSFET
| Part | Datasheet |
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FDI8442 |
FDI8442 (pdf) |
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| FDI8442 N-Channel MOSFET August 2007 FDI8442 N-Channel MOSFET 40V, 80A, 2.9mΩ - Typ rDS on = 2.3mΩ at VGS = 10V, ID = 80A - Typ Qg 10 = 181nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter / Alternator - Distributed Power Architectures and VRMs - RoHS Compliant - Primary Switch for 12V Systems 2007 Fairchild Semiconductor Corporation FDI8442 N-Channel MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC<158oC, VGS = 10V Drain Current Continuous Tamb = 25oC, VGS = 10V, with = 62oC/W Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Note 1 TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Package Marking and Ordering Information Note 2 Ratings 40 ±20 80 23 See Figure 4 720 254 -55 to +175 Units V mJ W/oC oC/W oC/W Device Marking FDI8442 Device FDI8442 Package TO-262 Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V VDS = 32V VGS = 0V TJ = 150°C VGS = ±20V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance VDS = VGS, ID = 250uA ID = 80A, VGS = 10V ID = 80A, VGS = 10V, TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz 12200 1040 VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 80A Ig = 1mA |
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