FQU5N50CTU-WS

FQU5N50CTU-WS Datasheet

FQU5N50CTU_WS N-Channel MOSFET

Part	Datasheet
FQU5N50CTU-WS	FQU5N50CTU-WS (pdf)

PDF Datasheet Preview
FQU5N50CTU_WS N-Channel MOSFET FQU5N50CTU_WS N-Channel MOSFET 500 V, A, • A, 500 V, RDS on = Ω = 10 V • Low Gate Charge Typ. 18 nC • Low Crss Typ. 15 pF • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability May 2015 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds Note 1 Note 2 Note 1 Note 1 Note 3 FQU5N50CTU_WS 500 16 ± 30 300 4 48 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQU5N50CTU_WS 110 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2003 Fairchild Semiconductor Corporation FQU5N50CTU_WS N-Channel MOSFET Package Marking and Ordering Information Part Number FQU5N50CTU_WS Top Mark FQU5N50CS Package I-PAK Packing Method Tube Reel Size N/A Tape Width N/A Quantity 75 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 uA ID = 250 uA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 uA VGS = 10 V, ID = A VDS = 40 V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 25 Ω VDS = 400 V, ID = 5 A, VGS = 10 V Note 4 Note 4 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4 A

PDF Datasheet Preview

FQU5N50CTU_WS N-Channel MOSFET

FQU5N50CTU_WS

N-Channel MOSFET
500 V, A,
• A, 500 V, RDS on = Ω = 10 V
• Low Gate Charge Typ. 18 nC
• Low Crss Typ. 15 pF
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability

May 2015

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.

I-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds

Note 1

Note 2 Note 1 Note 1 Note 3

FQU5N50CTU_WS 500 16 ± 30 300 4 48
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQU5N50CTU_WS 110

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2003 Fairchild Semiconductor Corporation

FQU5N50CTU_WS N-Channel MOSFET
Package Marking and Ordering Information

Part Number FQU5N50CTU_WS

Top Mark FQU5N50CS

Package I-PAK

Packing Method Tube

Reel Size N/A

Tape Width N/A

Quantity 75 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Parameter

Test Conditions

Min Typ

Off Characteristics

BVDSS IDSS

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

VGS = 0 V, ID = 250 uA

ID = 250 uA, Referenced to 25°C

VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 uA VGS = 10 V, ID = A VDS = 40 V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = 25 V, VGS = 0 V, f = MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = 250 V, ID = 5 A, VGS = 10 V, RG = 25 Ω

VDS = 400 V, ID = 5 A, VGS = 10 V

Note 4

Note 4

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 4 A

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQU5N50CTU-WS Datasheet file may be downloaded here without warranties.

Datasheet ID: FQU5N50CTU-WS 515465