FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET
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FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET March 2013 FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, • RDS on = Max. VGS = 10 V, ID = A • Low Gate Charge Typ.12.8 nC • Low Crss Typ. 9 pF • 100% Avalanche Tested • Improved dv/dt Capability • LCD/LED TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply TO-220 Absolute Maximum Ratings TO-220F Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25C - Continuous TC = 100C - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25C - Derate above 25C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics FDPF7N50U 500 5* * 20 * 30 125 5 20 -55 to +150 Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDPF7N50U 2009 Fairchild Semiconductor Corporation Unit V A V mJ A mJ V/ns W/C C C Unit C/W FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET Package Marking and Ordering Information Device Marking FDPF7N50U Device FDPF7N50U Package TO-220F Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = Breakdown Voltage Temperature Coefficient ID = Referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 2.5A Forward Transconductance VDS = 40V, ID = 2.5A Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, Coss |
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