FDH50N50
FDH50N50 Datasheet
FDH50N50 / FDA50N50 500V N-Channel MOSFET
| Part | Datasheet |
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FDH50N50 |
FDH50N50 (pdf) |
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| FDH50N50 / FDA50N50 500V N-Channel MOSFET FDH50N50 / FDA50N50 500V N-Channel MOSFET • 48A, 500V, RDS on = = 10 V • Low gate charge typical 105 nC • Low Crss typical 45 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-247 FDH Series TO-3P FDA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDH50N50/FDA50N50 500 48 192 ±20 1868 48 625 5 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. Max. Unit Package Marking and Ordering Information Device Marking FDH50N50 FDA50N50 Device FDH50N50 FDA50N50 Package TO-247 TO-3P Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 24A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 48A Note 4 -- Ciss Input Capacitance Coss |
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